vishay siliconix SI2377EDS new product document number: 65905 s10-0542-rev. a, 08-mar-10 www.vishay.com 1 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? typical esd performance 2000 v ? built in esd protection with zener diode ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 20 0.061 at v gs = - 4.5 v - 4.4 7.6 nc 0.080 at v gs = - 2.5 v - 3.8 0.110 at v gs = - 1.8 v - 3.3 0.165 at v gs = - 1.5 v - 0.5 p-channel mosfet s d r g orderin g information: SI2377EDS-t1-ge3 (lead (p b )-free and halogen-free) g to-236 (sot-23) s d top v ie w 2 3 1 * marking code SI2377EDS (p6)* notes: a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 4.4 a t c = 70 c - 3.5 t a = 25 c - 3.7 b, c t a = 70 c - 2.9 b, c pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 1.5 t a = 25 c - 1.0 b, c maximum power dissipation t c = 25 c p d 1.8 w t c = 70 c 1.1 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 80 100 c/w maximum junction-to-foot (drain) steady state r thjf 55 70
www.vishay.com 2 document number: 65905 s10-0542-rev. a, 08-mar-10 vishay siliconix SI2377EDS new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 13 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 6 a v ds = 0 v, v gs = 4.5 v 0.5 zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3.2 a 0.050 0.061 v gs = - 2.5 v, i d = - 2.8 a 0.065 0.080 v gs = - 1.8 v, i d = - 1.5 a 0.090 0.110 v gs = - 1.5 v, i d = - 0.5 a 0.110 0.165 forward transconductance a g fs v ds = - 10 v, i d = - 3.2 a 12 s dynamic b total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 5.3 a 14 21 nc gate-source charge v ds = - 10 v, v gs = - 4.5 v, i d = - 5.3 a 7.6 12 q gs 0.8 gate-drain charge q gd 3.1 gate resistance r g f = 1 mhz 0.4 2 4 k tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 i d ? - 4.3 a, v gen = - 4.5 v, r g = 1 0.20 0.3 s rise time t r 1.00 1.50 turn-off delay time t d(off) 4.00 6.00 fall time t f 2.00 3.00 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 i d ? - 4.3 a, v gen = - 8 v, r g = 1 0.09 0.14 rise time t r 0.40 0.60 turn-off delay time t d(off) 5.20 7.80 fall time t f 2.30 3.50 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.5 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 17
document number: 65905 s10-0542-rev. a, 08-mar-10 www.vishay.com 3 vishay siliconix SI2377EDS new product typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (ma) 0.0 0.3 0.6 0.9 1.2 1.5 03691215 t j = 25 c 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2.5 v v gs =1 v v gs =2 v v gs =1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.21 04 8 12 16 20 v gs =1. 8v v gs =4.5 v v gs =1.5 v v gs =2.5 v gate current vs. gate-source voltage transfer characteristics gate charge v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (a) 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 0 3 6 9 12 15 t j = 25 c t j = 150 c 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 0 3 6 9 12 15 v ds =16 v i d =5.3a v ds =5 v v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 65905 s10-0542-rev. a, 08-mar-10 vishay siliconix SI2377EDS new product typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ,2.5 v ;i d =3.2a v gs =1. 8v ;i d =1.5a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d = 3.2 a; t j = 25 c i d =0.5a;t j =25 c i d = 3.2 a; t j = 125 c i d =0.5a;t j = 125 c po w er ( w ) 0 10 20 30 40 time (s) 10 1000 0.1 0.01 0.001 100 1 soure-drain diode forward voltage threshold voltage safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s,10s dc
document number: 65905 s10-0542-rev. a, 08-mar-10 www.vishay.com 5 vishay siliconix SI2377EDS new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* t c - case temperat u re (c) i d - drain c u rrent (a) 0 1 2 3 4 5 0 255075100125150 power derating t c - case temperat u re (c) r ( w ) e w o p 0.0 0.4 0. 8 1.2 1.6 2.0 25 50 75 100 125 150
www.vishay.com 6 document number: 65905 s10-0542-rev. a, 08-mar-10 vishay siliconix SI2377EDS new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65905 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =130 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 single p u lse 0.02
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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